AT49BV4096A |
RFQ for AT49BV4096A Required Field |
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| Technical/Catalog Information | AT49BV4096A-12RC |
| Vendor | Atmel |
| Category | Integrated Circuits (ICs) |
| Memory Type | FLASH |
| Memory Size | 4M (512K x 8 or 256K x 16) |
| Speed | 120ns |
| Interface | Parallel |
| Package / Case | 44-SOIC |
| Packaging | Tube |
| Voltage - Supply | 2.7 V ~ 3.6 V |
| Operating Temperature | 0°C ~ 70°C |
| Format - Memory | FLASH |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | AT49BV4096A 12RC AT49BV4096A12RC |
| Product | Manufacturers | Pack | D/C |
| AT49BV4096A | Atmel | - | - |
The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufac- tured with Atmel's advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50 A.
The device contains a user-enabled "boot block" protection feature. Two versions of the feature are available: the AT49BV004/4096A locates the boot block at lowest order addresses ("bottom boot"); the AT49BV004T/4096AT locates it at highest order addresses ("top boot").
To allow for simple in-system reprogrammability, the AT49BV004(T)/4096A(T) does not require high input voltages for programming. Reading data out of the device is similar to reading from an EPROM; it has standard CE ,OE , and WE inputs to avoid bus contention. Reprogramming the AT49BV004(T)/4096A(T) is performed by first erasing a block of data and then programming on a byte-by-byte or word-by-word basis.
Features |
| 2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program ControlSector Architecture One 8K Words (16K bytes) Boot Block with Programming Lockout Two 4K Words (8K bytes) Parameter Blocks One 240K Words (480K bytes) Main Memory Array BlockFast Sector Erase Time - 10 seconds Byte-by-Byte or Word-By-Word Programming - 30 s TypicalHardware Data ProtectionDATA Polling For End Of Program Detection Low-Power Dissipation 25 mA Active Current 50 A CMOS Standby CurrentTypical 10,000 Write Cycles |
